Dr. Lingyu Meng is a Postdoctoral Researcher in Materials Science and Engineering at the University of California, Berkeley. He earned his M.S. (2020) and Ph.D. (2025) in Electrical and Computer Engineering from The Ohio State University. He joined the Al Balushi Research Group at UC Berkeley in November 2025.
Research
Dr. Lingyu Meng’s research focuses on the epitaxial growth, characterization, and device integration of semiconductor materials for next-generation electronic and neuromorphic computing applications. Building upon his Ph.D. work on the MOCVD growth and characterization of β-Ga₂O₃ and (AlₓGa₁₋ₓ)₂O₃ thin films, his current research at the University of California, Berkeley advances MOCVD and heterostructure growth techniques for two-dimensional (2D) transition-metal dichalcogenides (TMDs) materials. His work emphasizes precise control over composition, morphology, and interfacial properties, as well as the correlation between synthesis parameters, material characteristics, and device performance. Through these efforts, Dr. Meng aims to enable the rational design and integration of novel semiconductor heterostructures for emerging electronic technologies.