Jason Cheng-Hsiang Hsu is currently a PhD candidate in electrical engineering at Berkeley working with Prof. Sayeef Salahuddin on studying energy efficient magnetic switching in novel materials and device structures. He obtained his B.S. in electrical engineering from the University of Wisconsin-Madison in 2017 with Honors in Research where he was a Hilldale Undergraduate Research Fellow working on theoretical studies of electronic properties of 2D MoS2. He is also the recipient of the 2022 Demetri Angelakos Memorial Achievement Award and the 2022 Stanford Ovshinsky Student Travel Award. He also held an internship position at Western Digital working on plasmonic devices for heat-assisted magnetic recording technology in 2022.
Research
Hsu’s research interest sits at the intersection of materials design and discovery, understanding of physical phenomena, and utilization of new materials and physical phenomena for device applications. He currently focuses on the area of spintronics and ferroelectrics for near future computing hardwares. He has engineered a CMOS compatible material – silicide – to generate large spin-orbit torque that rivals the topological insulators. In addition, he also found a functional dependence of such large spin-torque with density of states and a novel resistivity scaling trend that can unlock current material design bottleneck for spin-orbit torque magnetic memory. His technical expertise include thin film deposition (Sputtering, evaporation especially on magnetic stacks), nanofabrication of devices, spin-transport measurements (harmonic Hall/magnetoresistance, ST-FMR, pulsed switching), magnetic characterization (MOKE, VSM) and synchrotron X-ray characterization (XMCD, XLD, GiXRD, in-situ e-field and current).
