Dr. Sayeef Salahuddin is the TSMC Distinguished Professor of Electrical Engineering and Computer Sciences at UC Berkeley. He is the co-director of the Berkeley Center for Negative Capacitance Transistors (BCNCT) and Berkeley Device Modeling Center (BDMC), and an associate director of ASCENT, a multi-university center within the DARPA/SRC JUMP initiative.
His group explores physics for low power electronic and spintronic devices. He is mostly known for the discovery of the Negative Capacitance effect that shows substantial promise for logic, memory and energy storage devices.
Dr. Salahuddin Salahuddin received the Presidential Early Career Award for Scientist and Engineers (PECASE) from President Obama. Salahuddin also received several other awards including the National Science Foundation CAREER award, the IEEE Nanotechnology Early Career Award, the Young Investigator Awards from the Airforce Office of Scientific Research and the Army Research Office, and the IEEE George E Smith Award. He served on the editorial board of IEEE Electron Devices Letters (2013-16) and was the chair the IEEE Electron Devices Society committee on Nanotechnology (2014-16). Salahuddin currently serves as the Editor-in-Chief of the IEEE Electron Devices Letters. Salahuddin is a Fellow of the IEEE and the APS.
