BETR Publications

H. Agarwal, P. Kushwaha, Y.-K. Lin, M.-Y. Kao, Y.-H. Liao, A. Dasgupta, S. Salahuddin, and C. Hu, “Proposal for Capacitance Matching in Negative Capacitance Field-Effect Transistors,” IEEE Electron Device Letters, vol. 40, No. 3, pp. 463-466, Mar 2019.

Y.-K. Lin, H. Argarwal, P. Kushwaha, M.-Y. Kao, Y.-H. Liao, K. Chatterjee, S. Salahuddin, and C. Hu, “Analysis and Modeling of Inner Fringing Field Effect on Negative Capacitance FinFETs,” IEEE Transactions on Electron Devices, vol. 66, no. 4, pp. 2023-2027, Mar 2019.

M.-Y. Kao, Y.-K. Lin, H. Agarwal, Y.-H. Liao, P. Kushwaha, A. Dasgupta, S. Salahuddin, C. Hu, “Optimization of NCFET by Matching Dielectric and Ferroelectric Nonuniformly along the Channel,” IEEE Electron Device Letters, vol. 40, no. 5, pp. 822-825, Mar 2019.

A. I. Vidaña, D. Zubia, M. Martinez, E. Acosta, J. Mireles Jr, T.-J. K. Liu, and S. F. Almeida, “Conductivity modulation in strained transition-metal-dichalcogenides via micro-electro-mechanical actuation,” Semiconductor Science and Technology, vol. 34, no. 4, p. 045013, Mar 2019.

F. Ding, Y.-T. Wu, D. Connelly, W. Zhang, and T.-J. K. Liu, “Simulation-Based Study of Si/Si0.9Ge0.1/Si Hetero-Channel FinFET for Enhanced Performance in Low-Power Applications,” IEEE Electron Device Letters, vol. 40, no. 3, pp. 363-366, Mar 2019.

Y-T. Wu, F. Ding, D. Connelly, M.-H. Chiang, J. F. Chen, and T.-J. K. Liu, “Simulation-Based Study of High-Density SRAM Voltage Scaling Enabled by Inserted-Oxide FinFET Technology,” IEEE Transactions on Electron Devices, vol. 66, no. 4, pp. 1754-1759, Mar 2019.

T. R. Rembert, D. Connelly, S. Sharma, L. Rubin, and T.-J. K. Liu, “Tilted ion implantation of spin-coated SiARC films for sub-lithographic and two-dimensional patterning,” Novel Patterning Technologies for Semiconductors, MEMS/NEMS, and MOEMS 2019, 190581F, Mar 2019.

H. M. Gramling, C. M. Towle, S. B. Desai, H. Sun, E. C. Lewis, V. D. Nguyen, J. W. Ager, D. Chrzan, E. M. Yeatman, A. Javey, and H. Taylor, “Spatially Precise Transfer of Patterned Monolayer WS2 and MoS2 with Features Larger than 104 μm2 Directly from Multilayer Sources,” ACS Applied Electronic Materials, vol. 1, no. 3, pp. 407-416, Mar 2019.

W. Ji, Y. Zhao, H. M. Fahad, J. Bullock, T. Allen, D.-H. Lien, S. D. Wolf, and A. Javey, “Dip Coating Passivation of Crystalline Silicon by Lewis Acids,” ACS Nano, vol. 13, no. 3, pp. 3723-3729, Mar 2019.

Y. Zeng, S. Khandelwal, K. F. Shariar, Z. Wang, G. Lin, Q. Cheng, P. Cui, R. Opila, G. Balakrishnan, S. Addamane, P. Taheri, D. Kiriya, M. Hettick, and A. Javey, “InAs FinFETs Performance Enhancement by Superacid Surface Treatment,” IEEE Transactions on Electron Devices, vol. 66, no. 4, pp. 1856-1861, Mar 2019.

T. Zimmerman, N. Antipa, D. Elnatan, A. Murru, S. Biswas, V. Pastore, M. Bonani, L. Waller, J. Fung, G. Fenu, and S. Bianco, “Stereo in-line holographic digital microscope,” Three-Dimensional and Multidimensional Microscopy: Image Acquisition and Processing XXVI, 1088315, Feb 2019.

J. W. Beeman, J. Bullock, H. Wang, J. Eichhorn, C. Towle, A. Javey, F. M. Toma, N. Mathews, and J. W. Ager, “Si photocathode with Ag-supported dendritic Cu catalyst for CO2 reduction,” Energy and Environmental Science, vol. 12, no. 3, pp. 1068-1077, Feb 2019.

W. Gao, H. Ota, D. Kiriya, K. Takei, and A. Javey, “Flexible Electronics Toward Wearable Sensing”, Accounts of Chemical Research, vol. 52, no. 3, pp. 523-533, Feb 2019.

N. Mehta, J. H. Huijsing, and V. Stojanović, “A 1-mW Class-AB Amplifier With −101 dB THD+N for High-Fidelity 16 Ω Headphones in 65-nm CMOS,” IEEE Journal of Solid-State Circuits, vol. 54, no. 4, pp. 948-958, Jan 2019.

A. K. Yadav, K. X. Nguyen, Z. Hong, P. García-Fernández, P. Aguado-Puente, C. T. Nelson, S. Das, B. Prasad, D. Kwon, S. Cheema, A. I. Khan, C. Hu, J. Íñiguez, J. Junquera, L.-Q. Chen, D. A. Muller, R. Ramesh, and S. Salahuddin, “Spatially resolved steady-state negative capacitance,” Nature, vol. 565, no. 7740, pp. 468-471, Jan 2019.

H. Kim, G. H. Ahn, J. Cho, M. Amani, J. P. Mastandrea, C. K. Groschner, D.-H. Lien, Y. Zhao, J. W. Ager, M. C. Scott, D. C. Chrzan, and A. Javey, “Synthetic WSe2 monolayers with high photoluminescence quantum yield”, Science Advances, vol. 5, no. 1, p. eaau4728, Jan 2019.

J. Bullock, Y. Wan, M. Hettick, X. Zhaoran, S. P. Phang, D. Yan, H. Wang, W. Ji, C. Samundsett, Z. Hameiri, D. Macdonald, A. Cuevas, and A. Javey, “Dopant‐Free Partial Rear Contacts Enabling 23% Silicon Solar Cells”, Advanced Energy Materials, vol. 9, no. 9, p. 1803367, Jan 2019.

G. Pitner, G. Hills, J. P. Llinas, K. Persson, R. S. Park, J. Bokor, S. Mitra, and H.-S. P. Wong, “Low-Temperature Side-Contact to Carbon Nanotube Transistors: Resistance Distributions Down to 10 nm Contact Length,” Nano Letters, vol. 19, no. 2, pp. 1083-1089, Jan 2019.

H. Y. Hwang, J. S. Lee, J. Henriksson, K. Kwon, T. J. Seok, M. C. Wu, and P. O’Brien, “Pluggable Silicon Photonic MEMS Switch Package for Data Centre,” 2018 IEEE 20th Electronics Packaging Technology Conference (EPTC), Dec 2018.

M. Chen, Z. F. Phillips, and L. Waller, “Quantitative differential phase contrast (DPC) microscopy with computational aberration correction,” Optics Express, vol. 26, no. 25, pp. 32888-32899, Dec 2018.