BETR Publications

Y.-K. Lin, P. Kushwaha, J. P. Duarte, H.-L. Chang, H. Agarwal, S. Khandelwal, A. B. Sachid, M. Harter, J. Watts, Y. S. Chauhan, S. Salahuddin, and C. Hu, “New Mobility Model for Accurate Modeling of Transconductance in FDSOI MOSFETs,” IEEE Trans. Electron Devices, vol. 65, no. 2, pp. 463–469, Jan. 2018.