Dr. Siwoo Lee is an Executive Vice President of DRAM R&D Pathfinding in SSI (Samsung Semiconductor Inc.), where his R&D activities focus on next generation DRAM architecture, especially disruptive 3D DRAM.
Prior to joining SSI, he led DRAM Pathfinding team at the Micron Technology R&D Center, where his main focus was 3D DRAM, VCT and OS channel as well as conventional DRAM. Prior to Micron he started his career at Samsung Electronics R&D Center in Korea, where he worked on DRAM process integration across many generations.
Dr. Lee was dispatched to UC Berkeley EECS Department as a Visiting Industrial Fellow during 2007-2008. He has 46+ US patents issued or filed and he holds a Ph.D. degree in Materials Science and Technology from Seoul National University.
