Nirmaan Shanker is currently a second-year graduate student in the Salahuddin group at UC Berkeley, where he is exploring the use of CMOS-compatible ferroelectric HfO2 for both logic and memory devices. He received a B.S. in Electrical Engineering and Computer Sciences and a B.S. in Materials Science and Engineering in 2020 from UC Berkeley. His main goal is to integrate novel materials and physics in modern-day electronics to further advance technology.
Research
With the discovery of ferroelectricity in CMOS-compatible materials, HfO2 and ZrO2 in 2011, there has been a renewed interest to integrate ferroelectric-based devices into modern-day electronics. My research aims to characterize and understand the ferroelectric behavior in these materials through structural and electrical methods, as well as integrate these materials at the device level for both logic (negative capacitance FETs) and memory (ferroelectric field-effect transistors and ferroelectric tunnel junctions).
